Gaya APA

Jung, H. (2020). Subthreshold swing model using scale length for sub-10 nm junction-based double-gate MOSFETs (IJECE Vol. 10, No. 2, April 2020) . Kunsan: IJECE.

Gaya MLA

Jung, Hakkee. "Subthreshold swing model using scale length for sub-10 nm junction-based double-gate MOSFETs (IJECE Vol. 10, No. 2, April 2020)". Kunsan: IJECE, 2020. Text.